irg5k50p5k50pm06e IRG5K100HF06A 1 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 absolute maximum ratings of igbt v ces collector to emitter voltage 600 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 100 a t c = 25c 170 a i cm pulse collector current t j = 150c 200 a p d maximum power dissipation (igbt) t c = 25c, t j = 150c 405 w t j maximum igbt junction temperature 150 c t jop maximum operating junction temperature range - 40 to +150 c t stg - 40 to +125 c storage temperature v ces = 600v i c = 100a at t c = 80 ? c t sc 10sec v ce(on) = 1.80v at i c = 100a igbt half - bridge pow ir 34 ? package features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 100% rbsoa tested rugged transient performance 10sec short circuit safe operating area pow ir 34 ? package industry standard lead free rohs compliant, environmental friendly base part number package type standard pack quantity orderable part number IRG5K100HF06A pow ir 34 ? box 80 IRG5K100HF06A applications ? industrial motor drive ? uninterruptible power supply ? welding and cutting machine ? switched mode power supply ? induction heating ? ac inverter drive downloaded from: http:///
irg5k50p5k50pm06e IRG5K100HF06A 2 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 switching characteristics of igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 175 ns t j = 25c v cc =300v, i c = 100a, r g = 20?, v ge =15v, inductive load 175 t j = 125c t r rise time 130 ns t j = 25c 125 t j = 125c t d(off) turn - off delay time 435 ns t j = 25c 445 t j = 125c t f fall time 125 ns t j = 25c 130 t j = 125c e on turn - on switching loss 1.3 mj t j = 25c 1.7 t j = 125c e off turn - off switching loss 2.4 mj t j = 25c 2.9 t j = 125c q g total gate charge 530 nc t j = 25c c ies input capacitance 6.2 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 0.56 c res reverse transfer capacitance 0.22 rbsoa reverse bias safe operating area trapezoid i c = 200a,v cc = 480v, v p = 600v, r g = 15?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 300v, v ge = 15v, t j = 150c electrical characteristics of igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 600 v v ge = 0v, i c = 1ma v ge(th) gate threshold voltage 3.5 4.5 5.5 v i c = 0.25ma, v ce = v ge v ce(on) collector to emitter saturation voltage 1.80 2.10 v t j = 25c i c = 100a, v ge = 15v 2.00 v t j = 125c i ces collector to emitter leakage current 1 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0 downloaded from: http:///
irg5k50p5k50pm06e IRG5K100HF06A 3 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 absolute maximum ratings of freewheeling diode v rrm repetitive peak reverse voltage 600 v i f diode continuous forward current, t c = 25c 200 a diode continuous forward current, t c = 80c 100 i fm pulse diode current 200 a module characteristics min. typ. max. unit parameter v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v r jc junction - to - case (igbt) 0.31 c/w r jc junction - to - case (diode) 1.05 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w m power terminals screw: m5 3.0 5.0 nm m mounting screw: m6 4.0 6.0 nm g weight 180 g electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 1.50 v t j = 25c i f = 100a , v ge = 0v 1.80 1.50 t j = 125c i rr peak reverse recovery current 30 a t j = 25c i f 100a, di/dt= 820a/ s, v rr = 300v, v ge = - 15v 45 t j = 125c q rr reverse recovery charge 1.4 c t j = 25c 3.5 t j = 125c e rec reverse recovery energy 0.14 mj t j = 25c 0.69 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG5K100HF06A 4 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.1 typical igbt saturation characteristics fig.2 typical igbt output characteristics fig.3 typical diode forward characteristics fig. 4 typical capacitance characteristics fig.5 typical switching loss vs. collector current fig.6 typical switching loss vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ce (v) i c (a) v ge =15v t j =125c t j =25c 0 20 40 60 80 100 120 140 160 180 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v f (v) i f (a) v ge =0v t j =125c t j =25c 0 5 10 15 20 25 0 2 4 6 8 10 12 c (nf) v ce (v) v ce = 0 v,f=1mhz c ies c oes 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 7 e (mj) i c (a) v cc =300v,v ge =+/-15v, r g =15 ohm,t j =125c e off e on e rec 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 e (mj) rg ( ? ) v cc = 300v ,v ge = +/-15v, i c = 100a ,t j = 125 c e off e on e rec 0 20 40 60 80 100 120 140 160 180 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ce (v) i c (a) t j =125c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v downloaded from: http:///
irg5k50p5k50pm06e IRG5K100HF06A 5 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.7 typical load current vs. frequency fig.8 reverse bias safe operation area (rbsoa) fig.9 typical transient thermal impedance (igbt) fig.10 typical transient thermal impedance (diode) 0 20 40 60 80 100 120 140 160 1 10 100 duty cycle:50% t j =125c t c =80c rg=20 ohm,v ge =15v frequency (khz) load current (a) square wave: diode as specified v cc i 0.001 0.01 0.1 1 2 0.0 0.1 0.2 0.3 0.4 z th jc ( k/w ) t ( s ) z th jc :igbt 0.001 0.01 0.1 1 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 z th jc ( k/w ) t ( s ) z th jc :diode 0 100 200 300 400 500 600 0 50 100 150 200 i c (a) v ces (v) module chip downloaded from: http:///
irg5k50p5k50pm06e IRG5K100HF06A 6 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 internal circuit: package outline (unit: mm): qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifie rs web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/ downloaded from: http:///
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